Abstract: Silicon nanopillars (SiNPs) have attracted considerable interest due to their improved optical characteristics in the near-infrared (NIR) range. However, their high selectivity restricts ...
Abstract: 10 Gb/s operation of GaInAs/InP lateral junction-type photodiode was obtained by adopting a narrow stripe width of 0.85 μm. The responsivity of 0.39 A/W and the 3dB bandwidth of 8.8 GHz at a ...
Vishay Intertechnology, Inc. broadens its optoelectronics portfolio with the introduction of a new high speed silicon PIN ...
A compact silicon PIN photodiode promises higher sensitivity and faster response for next-gen wearables and health monitors.
Device Offers Large Sensitive Area of 2.8 mm² and High Light Current to 16 μA in Compact 3.2 mm by 2.0 mm by 0.6 mm Form ...
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